Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
Typical CMOS materials in the telecommunications band suffer from two-photon absorption or possess weak Kerr nonlinearities. Here, Ooiet al. demonstrate 42.5 dB optical parametric amplification in ultra-silicon-rich nitride waveguides, designed to have strong nonlinearities with negligible losses.
Guardado en:
Autores principales: | K. J. A. Ooi, D. K. T. Ng, T. Wang, A. K. L. Chee, S. K. Ng, Q. Wang, L. K. Ang, A. M. Agarwal, L. C. Kimerling, D. T. H. Tan |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/7f6ed2486dad49f78b6343084767f909 |
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