Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.

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Autores principales:	Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm, Emmanouil Dimakis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/7f7cca93f1214b2cad8008286490e2f6
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spelling	oai:doaj.org-article:7f7cca93f1214b2cad8008286490e2f62021-12-02T14:38:40ZWidely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch10.1038/s41467-019-10654-72041-1723https://doaj.org/article/7f7cca93f1214b2cad8008286490e2f62019-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10654-7https://doaj.org/toc/2041-1723Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.Leila BalaghiGenziana BussoneRaphael GrifoneRené HübnerJörg GrenzerMahdi Ghorbani-AslArkady V. KrasheninnikovHarald SchneiderManfred HelmEmmanouil DimakisNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Leila Balaghi Genziana Bussone Raphael Grifone René Hübner Jörg Grenzer Mahdi Ghorbani-Asl Arkady V. Krasheninnikov Harald Schneider Manfred Helm Emmanouil Dimakis Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
description	Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.
format	article
author	Leila Balaghi Genziana Bussone Raphael Grifone René Hübner Jörg Grenzer Mahdi Ghorbani-Asl Arkady V. Krasheninnikov Harald Schneider Manfred Helm Emmanouil Dimakis
author_facet	Leila Balaghi Genziana Bussone Raphael Grifone René Hübner Jörg Grenzer Mahdi Ghorbani-Asl Arkady V. Krasheninnikov Harald Schneider Manfred Helm Emmanouil Dimakis
author_sort	Leila Balaghi
title	Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
title_short	Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
title_full	Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
title_fullStr	Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
title_full_unstemmed	Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
title_sort	widely tunable gaas bandgap via strain engineering in core/shell nanowires with large lattice mismatch
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/7f7cca93f1214b2cad8008286490e2f6
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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

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