Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2016
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| Subjects: | |
| Online Access: | https://doaj.org/article/7f9c771311d547fda7ea11260646e288 |
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| Summary: | Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states. |
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