Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states...

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Autores principales:	Pavan Nukala, Chia-Chun Lin, Russell Composto, Ritesh Agarwal
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/7f9c771311d547fda7ea11260646e288
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spelling	oai:doaj.org-article:7f9c771311d547fda7ea11260646e2882021-12-02T17:32:51ZUltralow-power switching via defect engineering in germanium telluride phase-change memory devices10.1038/ncomms104822041-1723https://doaj.org/article/7f9c771311d547fda7ea11260646e2882016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10482https://doaj.org/toc/2041-1723Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states.Pavan NukalaChia-Chun LinRussell CompostoRitesh AgarwalNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Pavan Nukala Chia-Chun Lin Russell Composto Ritesh Agarwal Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
description	Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states.
format	article
author	Pavan Nukala Chia-Chun Lin Russell Composto Ritesh Agarwal
author_facet	Pavan Nukala Chia-Chun Lin Russell Composto Ritesh Agarwal
author_sort	Pavan Nukala
title	Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
title_short	Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
title_full	Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
title_fullStr	Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
title_full_unstemmed	Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
title_sort	ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/7f9c771311d547fda7ea11260646e288
work_keys_str_mv	AT pavannukala ultralowpowerswitchingviadefectengineeringingermaniumtelluridephasechangememorydevices AT chiachunlin ultralowpowerswitchingviadefectengineeringingermaniumtelluridephasechangememorydevices AT russellcomposto ultralowpowerswitchingviadefectengineeringingermaniumtelluridephasechangememorydevices AT riteshagarwal ultralowpowerswitchingviadefectengineeringingermaniumtelluridephasechangememorydevices
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Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

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