Large Perpendicular Exchange Energy in TbxCo100−x/Cu(t)/[Co/Pt]2 Heterostructures

In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the TbxCo100−x/Cu/[Co/Pt]2 het...

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Autores principales:	Sina Ranjbar, Satoshi Sumi, Kenji Tanabe, Hiroyuki Awano
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	perpendicular magnetic anisotropy ferrimagnet perpendicular exchange bias amorphous thin films spintronic applications Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/7fd84a9489e94f77b2248becb97b2371
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spelling	oai:doaj.org-article:7fd84a9489e94f77b2248becb97b23712021-11-25T18:12:28ZLarge Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures10.3390/magnetochemistry71101412312-7481https://doaj.org/article/7fd84a9489e94f77b2248becb97b23712021-10-01T00:00:00Zhttps://www.mdpi.com/2312-7481/7/11/141https://doaj.org/toc/2312-7481In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers. The dependence of the PEE on the interlayer thickness of Cu and the composition of Tb–Co were analyzed. We demonstrate that the PEE can be controlled by changing the Cu interlayer thickness of 0.2 < t<sub>Cu</sub> < 0.3 (nm). We found that PEE reaches a maximum value (<i>σ</i><sub>Pw</sub> = 1 erg/cm<sup>2</sup>) at around x = 24%. We, therefore, realize the mechanism of PEE in the Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures. We observe two competing mechanisms—one leading to an increase and the other to a decrease—which corresponds to the effect of Tb content on saturation magnetization and the coercivity of heterostructures. Sequentially, our findings show possibilities for both pinned layers in spintronics and memory device applications by producing large PEE and controlled PEE by Cu thickness, based on Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures.Sina RanjbarSatoshi SumiKenji TanabeHiroyuki AwanoMDPI AGarticleperpendicular magnetic anisotropyferrimagnetperpendicular exchange biasamorphous thin filmsspintronic applicationsChemistryQD1-999ENMagnetochemistry, Vol 7, Iss 141, p 141 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	perpendicular magnetic anisotropy ferrimagnet perpendicular exchange bias amorphous thin films spintronic applications Chemistry QD1-999
spellingShingle	perpendicular magnetic anisotropy ferrimagnet perpendicular exchange bias amorphous thin films spintronic applications Chemistry QD1-999 Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
description	In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers. The dependence of the PEE on the interlayer thickness of Cu and the composition of Tb–Co were analyzed. We demonstrate that the PEE can be controlled by changing the Cu interlayer thickness of 0.2 < t<sub>Cu</sub> < 0.3 (nm). We found that PEE reaches a maximum value (<i>σ</i><sub>Pw</sub> = 1 erg/cm<sup>2</sup>) at around x = 24%. We, therefore, realize the mechanism of PEE in the Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures. We observe two competing mechanisms—one leading to an increase and the other to a decrease—which corresponds to the effect of Tb content on saturation magnetization and the coercivity of heterostructures. Sequentially, our findings show possibilities for both pinned layers in spintronics and memory device applications by producing large PEE and controlled PEE by Cu thickness, based on Tb<sub>x</sub>Co<sub>100−x</sub>/Cu/[Co/Pt]<sub>2</sub> heterostructures.
format	article
author	Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano
author_facet	Sina Ranjbar Satoshi Sumi Kenji Tanabe Hiroyuki Awano
author_sort	Sina Ranjbar
title	Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
title_short	Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
title_full	Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
title_fullStr	Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
title_full_unstemmed	Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures
title_sort	large perpendicular exchange energy in tb<sub>x</sub>co<sub>100−x</sub>/cu(t)/[co/pt]<sub>2</sub> heterostructures
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/7fd84a9489e94f77b2248becb97b2371
work_keys_str_mv	AT sinaranjbar largeperpendicularexchangeenergyintbsubxsubcosub100xsubcutcoptsub2subheterostructures AT satoshisumi largeperpendicularexchangeenergyintbsubxsubcosub100xsubcutcoptsub2subheterostructures AT kenjitanabe largeperpendicularexchangeenergyintbsubxsubcosub100xsubcutcoptsub2subheterostructures AT hiroyukiawano largeperpendicularexchangeenergyintbsubxsubcosub100xsubcutcoptsub2subheterostructures
_version_	1718411506189598720

Large Perpendicular Exchange Energy in Tb<sub>x</sub>Co<sub>100−x</sub>/Cu(t)/[Co/Pt]<sub>2</sub> Heterostructures

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