Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of the as-received (non-porous) photodetector. In ad...

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Autores principales:	Furqan Khairi Mohammed, Khi Poay Beh, Asmiet Ramizy, Naser M. Ahmed, Fong Kwong Yam, Zainuriah Hassan
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene cladding porous GaN high sensitivity UV photodetector Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/8040b18585574615818da0db586e596e
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spelling	oai:doaj.org-article:8040b18585574615818da0db586e596e2021-11-25T16:39:00ZImprovement of Porous GaN-Based UV Photodetector with Graphene Cladding10.3390/app1122108332076-3417https://doaj.org/article/8040b18585574615818da0db586e596e2021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10833https://doaj.org/toc/2076-3417This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of the as-received (non-porous) photodetector. In addition, it exhibits a lower magnitude of leakage current at dark ambient, about 70.9 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mi mathvariant="sans-serif">μ</mi><mi mathvariant="normal">A</mi></mrow></mrow></semantics></math></inline-formula>, compared to that of the as-received photodetector with 13.7 mA. However, it is also highly resistive in nature due to the corresponding electrochemical process selectively dissolute doped regions. Herein, two types of graphene, derived from CVD and the electrochemical exfoliation (EC) process, were cladded onto the porous GaN region. The formation of a graphene/porous GaN interface, as evident from the decrease in average distance between defects as determined from Raman spectroscopy, infers better charge accumulation and conductance, which significantly improved UV sensing. While the leakage current shows little improvement, the UV sensitivity was greatly enhanced, by about 460% and 420% for CVD and EC cladded samples. The slight difference between types of graphene was attributed to the coverage area on porous GaN, where CVD-grown graphene tends to be continuous while EC-graphene relies on aggregation to form films.Furqan Khairi MohammedKhi Poay BehAsmiet RamizyNaser M. AhmedFong Kwong YamZainuriah HassanMDPI AGarticlegraphene claddingporous GaNhigh sensitivityUV photodetectorTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10833, p 10833 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	graphene cladding porous GaN high sensitivity UV photodetector Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	graphene cladding porous GaN high sensitivity UV photodetector Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Furqan Khairi Mohammed Khi Poay Beh Asmiet Ramizy Naser M. Ahmed Fong Kwong Yam Zainuriah Hassan Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
description	This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of the as-received (non-porous) photodetector. In addition, it exhibits a lower magnitude of leakage current at dark ambient, about 70.9 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mi mathvariant="sans-serif">μ</mi><mi mathvariant="normal">A</mi></mrow></mrow></semantics></math></inline-formula>, compared to that of the as-received photodetector with 13.7 mA. However, it is also highly resistive in nature due to the corresponding electrochemical process selectively dissolute doped regions. Herein, two types of graphene, derived from CVD and the electrochemical exfoliation (EC) process, were cladded onto the porous GaN region. The formation of a graphene/porous GaN interface, as evident from the decrease in average distance between defects as determined from Raman spectroscopy, infers better charge accumulation and conductance, which significantly improved UV sensing. While the leakage current shows little improvement, the UV sensitivity was greatly enhanced, by about 460% and 420% for CVD and EC cladded samples. The slight difference between types of graphene was attributed to the coverage area on porous GaN, where CVD-grown graphene tends to be continuous while EC-graphene relies on aggregation to form films.
format	article
author	Furqan Khairi Mohammed Khi Poay Beh Asmiet Ramizy Naser M. Ahmed Fong Kwong Yam Zainuriah Hassan
author_facet	Furqan Khairi Mohammed Khi Poay Beh Asmiet Ramizy Naser M. Ahmed Fong Kwong Yam Zainuriah Hassan
author_sort	Furqan Khairi Mohammed
title	Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
title_short	Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
title_full	Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
title_fullStr	Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
title_full_unstemmed	Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding
title_sort	improvement of porous gan-based uv photodetector with graphene cladding
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/8040b18585574615818da0db586e596e
work_keys_str_mv	AT furqankhairimohammed improvementofporousganbaseduvphotodetectorwithgraphenecladding AT khipoaybeh improvementofporousganbaseduvphotodetectorwithgraphenecladding AT asmietramizy improvementofporousganbaseduvphotodetectorwithgraphenecladding AT nasermahmed improvementofporousganbaseduvphotodetectorwithgraphenecladding AT fongkwongyam improvementofporousganbaseduvphotodetectorwithgraphenecladding AT zainuriahhassan improvementofporousganbaseduvphotodetectorwithgraphenecladding
_version_	1718413087073107968

Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

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