Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.

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Autores principales:	Doohee Cho, Sangmo Cheon, Ki-Seok Kim, Sung-Hoon Lee, Yong-Heum Cho, Sang-Wook Cheong, Han Woong Yeom
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/8047f17bba84489ab8a25c61d226c3b1
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spelling	oai:doaj.org-article:8047f17bba84489ab8a25c61d226c3b12021-12-02T16:58:00ZNanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS210.1038/ncomms104532041-1723https://doaj.org/article/8047f17bba84489ab8a25c61d226c3b12016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10453https://doaj.org/toc/2041-1723Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.Doohee ChoSangmo CheonKi-Seok KimSung-Hoon LeeYong-Heum ChoSang-Wook CheongHan Woong YeomNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Doohee Cho Sangmo Cheon Ki-Seok Kim Sung-Hoon Lee Yong-Heum Cho Sang-Wook Cheong Han Woong Yeom Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
description	Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.
format	article
author	Doohee Cho Sangmo Cheon Ki-Seok Kim Sung-Hoon Lee Yong-Heum Cho Sang-Wook Cheong Han Woong Yeom
author_facet	Doohee Cho Sangmo Cheon Ki-Seok Kim Sung-Hoon Lee Yong-Heum Cho Sang-Wook Cheong Han Woong Yeom
author_sort	Doohee Cho
title	Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
title_short	Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
title_full	Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
title_fullStr	Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
title_full_unstemmed	Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
title_sort	nanoscale manipulation of the mott insulating state coupled to charge order in 1t-tas2
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/8047f17bba84489ab8a25c61d226c3b1
work_keys_str_mv	AT dooheecho nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT sangmocheon nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT kiseokkim nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT sunghoonlee nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT yongheumcho nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT sangwookcheong nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2 AT hanwoongyeom nanoscalemanipulationofthemottinsulatingstatecoupledtochargeorderin1ttas2
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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

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