Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.
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Autores principales: | Doohee Cho, Sangmo Cheon, Ki-Seok Kim, Sung-Hoon Lee, Yong-Heum Cho, Sang-Wook Cheong, Han Woong Yeom |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
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Materias: | |
Acceso en línea: | https://doaj.org/article/8047f17bba84489ab8a25c61d226c3b1 |
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