Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.
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| Auteurs principaux: | , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/8047f17bba84489ab8a25c61d226c3b1 |
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