Computing In-Memory Design Based on Double Word Line and Double Threshold 4T SRAM
In order to cope with the storage wall of the von Neumann computing architecture, the computing in-memory (CIM) architecture embeds logic in the memory, and completes the operation while reading the data, so that the storage unit has computing power and reduces processing data transfer between the d...
Saved in:
Main Author: | LIN Zhiting, NIU Jianchao+, WU Xiulong, PENG Chunyu |
---|---|
Format: | article |
Language: | ZH |
Published: |
Journal of Computer Engineering and Applications Beijing Co., Ltd., Science Press
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/8079443d52f2411c9b270ccb595a8bb5 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
An SRAM Compiler for Monolithic-3-D Integrated Circuit With Carbon Nanotube Transistors
by: Daehyun Kim, et al.
Published: (2021) -
STT-BSNN: An In-Memory Deep Binary Spiking Neural Network Based on STT-MRAM
by: Van-Tinh Nguyen, et al.
Published: (2021) -
Smartphones and attention, curse or blessing? - A review on the effects of smartphone usage on attention, inhibition, and working memory
by: Magnus Liebherr, et al.
Published: (2020) -
Aircraft Gearbox Fault Diagnosis System: An Approach based on Deep Learning Techniques
by: Mallikarjuna P B, et al.
Published: (2020) -
Indexing structures for the PLS blockchain
by: Alex Shafarenko
Published: (2021)