Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms

Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during measurements, making it difficult to accurately estima...

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Autores principales:	Naruto Miyakawa, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	graphene field effect transistors drift suppression sensor drift biosensors Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/80d249246499424abb92087fe24f023a
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spelling	oai:doaj.org-article:80d249246499424abb92087fe24f023a2021-11-25T18:56:34ZDrift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms10.3390/s212274551424-8220https://doaj.org/article/80d249246499424abb92087fe24f023a2021-11-01T00:00:00Zhttps://www.mdpi.com/1424-8220/21/22/7455https://doaj.org/toc/1424-8220Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during measurements, making it difficult to accurately estimate the analyte concentration. One possible reason for this drift is that p-doping of GFETs is gradually countered by cations in the solution, because the cations can permeate into the polymer residue and/or between graphene and SiO<sub>2</sub> substrates. Therefore, we propose doping sufficient cations to counter p-doping of GFETs prior to the measurements. For the pre-treatment, GFETs were immersed in a 15 mM sodium chloride aqueous solution for 25 h. The pretreated GFETs showed that the charge neutrality point (CNP) drifted by less than 3 mV during 1 h of measurement in a phosphate buffer, while the non-treated GFETs showed that the CNP was severely drifted by approximately 50 mV, demonstrating a 96% reduction of the drift by the pre-treatment. X-ray photoelectron spectroscopy analysis revealed the accumulation of sodium ions in the GFETs through pre-treatment. Our method is useful for suppressing drift, thus allowing accurate estimation of the target analyte concentration.Naruto MiyakawaAyumi ShinagawaYasuko KajiwaraShota UshibaTakao OnoYasushi KanaiShinsuke TaniMasahiko KimuraKazuhiko MatsumotoMDPI AGarticlegraphene field effect transistorsdrift suppressionsensor driftbiosensorsChemical technologyTP1-1185ENSensors, Vol 21, Iss 7455, p 7455 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	graphene field effect transistors drift suppression sensor drift biosensors Chemical technology TP1-1185
spellingShingle	graphene field effect transistors drift suppression sensor drift biosensors Chemical technology TP1-1185 Naruto Miyakawa Ayumi Shinagawa Yasuko Kajiwara Shota Ushiba Takao Ono Yasushi Kanai Shinsuke Tani Masahiko Kimura Kazuhiko Matsumoto Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
description	Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during measurements, making it difficult to accurately estimate the analyte concentration. One possible reason for this drift is that p-doping of GFETs is gradually countered by cations in the solution, because the cations can permeate into the polymer residue and/or between graphene and SiO<sub>2</sub> substrates. Therefore, we propose doping sufficient cations to counter p-doping of GFETs prior to the measurements. For the pre-treatment, GFETs were immersed in a 15 mM sodium chloride aqueous solution for 25 h. The pretreated GFETs showed that the charge neutrality point (CNP) drifted by less than 3 mV during 1 h of measurement in a phosphate buffer, while the non-treated GFETs showed that the CNP was severely drifted by approximately 50 mV, demonstrating a 96% reduction of the drift by the pre-treatment. X-ray photoelectron spectroscopy analysis revealed the accumulation of sodium ions in the GFETs through pre-treatment. Our method is useful for suppressing drift, thus allowing accurate estimation of the target analyte concentration.
format	article
author	Naruto Miyakawa Ayumi Shinagawa Yasuko Kajiwara Shota Ushiba Takao Ono Yasushi Kanai Shinsuke Tani Masahiko Kimura Kazuhiko Matsumoto
author_facet	Naruto Miyakawa Ayumi Shinagawa Yasuko Kajiwara Shota Ushiba Takao Ono Yasushi Kanai Shinsuke Tani Masahiko Kimura Kazuhiko Matsumoto
author_sort	Naruto Miyakawa
title	Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
title_short	Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
title_full	Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
title_fullStr	Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
title_full_unstemmed	Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms
title_sort	drift suppression of solution-gated graphene field-effect transistors by cation doping for sensing platforms
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/80d249246499424abb92087fe24f023a
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Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms

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