Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs

Abstract The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shr...

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Autores principales:	Shigeyuki Imura, Keitada Mineo, Yuki Honda, Toshiki Arai, Kazunori Miyakawa, Toshihisa Watabe, Misao Kubota, Keisuke Nishimoto, Mutsumi Sugiyama, Masakazu Nanba
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/80d4df358c69404d95ca54098f053307
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spelling	oai:doaj.org-article:80d4df358c69404d95ca54098f0533072021-12-02T12:42:18ZEnhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs10.1038/s41598-020-78837-72045-2322https://doaj.org/article/80d4df358c69404d95ca54098f0533072020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78837-7https://doaj.org/toc/2045-2322Abstract The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.Shigeyuki ImuraKeitada MineoYuki HondaToshiki AraiKazunori MiyakawaToshihisa WatabeMisao KubotaKeisuke NishimotoMutsumi SugiyamaMasakazu NanbaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shigeyuki Imura Keitada Mineo Yuki Honda Toshiki Arai Kazunori Miyakawa Toshihisa Watabe Misao Kubota Keisuke Nishimoto Mutsumi Sugiyama Masakazu Nanba Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
description	Abstract The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.
format	article
author	Shigeyuki Imura Keitada Mineo Yuki Honda Toshiki Arai Kazunori Miyakawa Toshihisa Watabe Misao Kubota Keisuke Nishimoto Mutsumi Sugiyama Masakazu Nanba
author_facet	Shigeyuki Imura Keitada Mineo Yuki Honda Toshiki Arai Kazunori Miyakawa Toshihisa Watabe Misao Kubota Keisuke Nishimoto Mutsumi Sugiyama Masakazu Nanba
author_sort	Shigeyuki Imura
title	Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
title_short	Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
title_full	Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
title_fullStr	Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
title_full_unstemmed	Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
title_sort	enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and cmosfets
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/80d4df358c69404d95ca54098f053307
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Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs

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