Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

p–n junctions: unusual transfer characteristic p–n heterojunctions based on certain two-dimensional transition metal dichalcogenides display an unusual dip in the current–voltage characteristic. A team led by Anindya Das at the Indian Institute of Science in Bangalore fabricated p–n junctions made o...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Arup Kumar Paul, Manabendra Kuiri, Dipankar Saha, Biswanath Chakraborty, Santanu Mahapatra, A. K Sood, Anindya Das
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/80eb8ded0b854930a3ba94bfc5279213
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:80eb8ded0b854930a3ba94bfc5279213
record_format	dspace
spelling	oai:doaj.org-article:80eb8ded0b854930a3ba94bfc52792132021-12-02T16:05:45ZPhoto-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure10.1038/s41699-017-0017-32397-7132https://doaj.org/article/80eb8ded0b854930a3ba94bfc52792132017-06-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0017-3https://doaj.org/toc/2397-7132p–n junctions: unusual transfer characteristic p–n heterojunctions based on certain two-dimensional transition metal dichalcogenides display an unusual dip in the current–voltage characteristic. A team led by Anindya Das at the Indian Institute of Science in Bangalore fabricated p–n junctions made of few layers of MoTe2 and a single layer of MoS2 and observed an unexpected dip in the junction current as a function of the back gate voltage. The researchers could modulate the intensity and position of this dip feature by changing the power density of the incident light. They also performed theoretical calculations that qualitatively captured the behavior of the dip, which could be attributed to interface recombination of charge carriers. These findings further the understanding of the physics of thin-film interfaces, which can stimulate the improvement of devices.Arup Kumar PaulManabendra KuiriDipankar SahaBiswanath ChakrabortySantanu MahapatraA. K SoodAnindya DasNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Arup Kumar Paul Manabendra Kuiri Dipankar Saha Biswanath Chakraborty Santanu Mahapatra A. K Sood Anindya Das Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
description	p–n junctions: unusual transfer characteristic p–n heterojunctions based on certain two-dimensional transition metal dichalcogenides display an unusual dip in the current–voltage characteristic. A team led by Anindya Das at the Indian Institute of Science in Bangalore fabricated p–n junctions made of few layers of MoTe2 and a single layer of MoS2 and observed an unexpected dip in the junction current as a function of the back gate voltage. The researchers could modulate the intensity and position of this dip feature by changing the power density of the incident light. They also performed theoretical calculations that qualitatively captured the behavior of the dip, which could be attributed to interface recombination of charge carriers. These findings further the understanding of the physics of thin-film interfaces, which can stimulate the improvement of devices.
format	article
author	Arup Kumar Paul Manabendra Kuiri Dipankar Saha Biswanath Chakraborty Santanu Mahapatra A. K Sood Anindya Das
author_facet	Arup Kumar Paul Manabendra Kuiri Dipankar Saha Biswanath Chakraborty Santanu Mahapatra A. K Sood Anindya Das
author_sort	Arup Kumar Paul
title	Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
title_short	Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
title_full	Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
title_fullStr	Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
title_full_unstemmed	Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure
title_sort	photo-tunable transfer characteristics in mote2–mos2 vertical heterostructure
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/80eb8ded0b854930a3ba94bfc5279213
work_keys_str_mv	AT arupkumarpaul phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT manabendrakuiri phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT dipankarsaha phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT biswanathchakraborty phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT santanumahapatra phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT aksood phototunabletransfercharacteristicsinmote2mos2verticalheterostructure AT anindyadas phototunabletransfercharacteristicsinmote2mos2verticalheterostructure
_version_	1718385157779488768

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Ejemplares similares