Conductibility and irradiation stability of single crystals znin2s4

This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies (3075 keV) and respective doses (10141020 cm2). The possibilities of manufacturing accelerated electron detectors are explored, and...

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Autores principales:	Pîntea, Valentina, Aramă, Efim, Gheorghiţă, Eugen, Maciuca, Anatol, Zhitar, V
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2014
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/81159a875061483f8832056a65e5129a
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spelling	oai:doaj.org-article:81159a875061483f8832056a65e5129a2021-11-21T11:59:19ZConductibility and irradiation stability of single crystals znin2s4539.12+621.315.592537-63651810-648Xhttps://doaj.org/article/81159a875061483f8832056a65e5129a2014-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2014/article/36709https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies (3075 keV) and respective doses (10141020 cm2). The possibilities of manufacturing accelerated electron detectors are explored, and their parameters are estimated. Considering that the energy values on the order of 102 keV are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.Pîntea, ValentinaAramă, EfimGheorghiţă, EugenMaciuca, AnatolZhitar, VD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 13, Iss 1-2, Pp 23-29 (2014)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Pîntea, Valentina Aramă, Efim Gheorghiţă, Eugen Maciuca, Anatol Zhitar, V Conductibility and irradiation stability of single crystals znin2s4
description	This study presents the results of investigations on the conductivity and irradiation stability of single crystals ZnIn2S4 in a wide range of incident electron energies (3075 keV) and respective doses (10141020 cm2). The possibilities of manufacturing accelerated electron detectors are explored, and their parameters are estimated. Considering that the energy values on the order of 102 keV are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.
format	article
author	Pîntea, Valentina Aramă, Efim Gheorghiţă, Eugen Maciuca, Anatol Zhitar, V
author_facet	Pîntea, Valentina Aramă, Efim Gheorghiţă, Eugen Maciuca, Anatol Zhitar, V
author_sort	Pîntea, Valentina
title	Conductibility and irradiation stability of single crystals znin2s4
title_short	Conductibility and irradiation stability of single crystals znin2s4
title_full	Conductibility and irradiation stability of single crystals znin2s4
title_fullStr	Conductibility and irradiation stability of single crystals znin2s4
title_full_unstemmed	Conductibility and irradiation stability of single crystals znin2s4
title_sort	conductibility and irradiation stability of single crystals znin2s4
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2014
url	https://doaj.org/article/81159a875061483f8832056a65e5129a
work_keys_str_mv	AT pinteavalentina conductibilityandirradiationstabilityofsinglecrystalsznin2s4 AT aramaefim conductibilityandirradiationstabilityofsinglecrystalsznin2s4 AT gheorghitaeugen conductibilityandirradiationstabilityofsinglecrystalsznin2s4 AT maciucaanatol conductibilityandirradiationstabilityofsinglecrystalsznin2s4 AT zhitarv conductibilityandirradiationstabilityofsinglecrystalsznin2s4
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Conductibility and irradiation stability of single crystals znin2s4

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