Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydroge...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/81d223cc24814be7b132c5f55a4ed021 |
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| Sumario: | Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydrogen gas flow chemical vapor epitaxy. |
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