Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydroge...

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Autores principales: Xiumei Zhang, Haiyan Nan, Shaoqing Xiao, Xi Wan, Xiaofeng Gu, Aijun Du, Zhenhua Ni, Kostya (Ken) Ostrikov
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/81d223cc24814be7b132c5f55a4ed021
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spelling oai:doaj.org-article:81d223cc24814be7b132c5f55a4ed0212021-12-02T17:01:50ZTransition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy10.1038/s41467-019-08468-82041-1723https://doaj.org/article/81d223cc24814be7b132c5f55a4ed0212019-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-08468-8https://doaj.org/toc/2041-1723Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydrogen gas flow chemical vapor epitaxy.Xiumei ZhangHaiyan NanShaoqing XiaoXi WanXiaofeng GuAijun DuZhenhua NiKostya (Ken) OstrikovNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Xiumei Zhang
Haiyan Nan
Shaoqing Xiao
Xi Wan
Xiaofeng Gu
Aijun Du
Zhenhua Ni
Kostya (Ken) Ostrikov
Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
description Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydrogen gas flow chemical vapor epitaxy.
format article
author Xiumei Zhang
Haiyan Nan
Shaoqing Xiao
Xi Wan
Xiaofeng Gu
Aijun Du
Zhenhua Ni
Kostya (Ken) Ostrikov
author_facet Xiumei Zhang
Haiyan Nan
Shaoqing Xiao
Xi Wan
Xiaofeng Gu
Aijun Du
Zhenhua Ni
Kostya (Ken) Ostrikov
author_sort Xiumei Zhang
title Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
title_short Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
title_full Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
title_fullStr Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
title_full_unstemmed Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
title_sort transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/81d223cc24814be7b132c5f55a4ed021
work_keys_str_mv AT xiumeizhang transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT haiyannan transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT shaoqingxiao transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT xiwan transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT xiaofenggu transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT aijundu transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT zhenhuani transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
AT kostyakenostrikov transitionmetaldichalcogenidesbilayersinglecrystalsbyreverseflowchemicalvaporepitaxy
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