Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydroge...

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Autores principales: Xiumei Zhang, Haiyan Nan, Shaoqing Xiao, Xi Wan, Xiaofeng Gu, Aijun Du, Zhenhua Ni, Kostya (Ken) Ostrikov
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/81d223cc24814be7b132c5f55a4ed021
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