Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
Abstract While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) $$\hbox {Bi}_2\hbox {Te}_3$$ Bi 2 Te 3 films b...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/8227bbf7549c4d1d8066a8e3a879eaf6 |
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| Sumario: | Abstract While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) $$\hbox {Bi}_2\hbox {Te}_3$$ Bi 2 Te 3 films by in situ four-point probe conductivity measurement. The impact of the vdW (Te–Te) interface appeared as a large conductivity increase with increasing thickness from 1 to 2 QL. Angle-resolved photoelectron spectroscopy and first-principles calculations reveal the confinement of bulk-like conduction band (CB) state into the vdW interface. Our analysis based on the Boltzmann equation showed that the conduction of the CB has a long mean free path compared to the surface-state conduction. This is mainly attributed to the spatial separation of the CB electrons and the donor defects located at the Bi sites. |
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