Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films

Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films

Abstract While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) $$\hbox {Bi}_2\hbox {Te}_3$$ Bi 2 Te 3 films b...

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Autores principales: Shinichiro Hatta, Ko Obayashi, Hiroshi Okuyama, Tetsuya Aruga
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/8227bbf7549c4d1d8066a8e3a879eaf6
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spelling oai:doaj.org-article:8227bbf7549c4d1d8066a8e3a879eaf62021-12-02T13:34:57ZMetallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films10.1038/s41598-021-85078-92045-2322https://doaj.org/article/8227bbf7549c4d1d8066a8e3a879eaf62021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85078-9https://doaj.org/toc/2045-2322Abstract While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) $$\hbox {Bi}_2\hbox {Te}_3$$ Bi 2 Te 3 films by in situ four-point probe conductivity measurement. The impact of the vdW (Te–Te) interface appeared as a large conductivity increase with increasing thickness from 1 to 2 QL. Angle-resolved photoelectron spectroscopy and first-principles calculations reveal the confinement of bulk-like conduction band (CB) state into the vdW interface. Our analysis based on the Boltzmann equation showed that the conduction of the CB has a long mean free path compared to the surface-state conduction. This is mainly attributed to the spatial separation of the CB electrons and the donor defects located at the Bi sites.Shinichiro HattaKo ObayashiHiroshi OkuyamaTetsuya ArugaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Shinichiro Hatta
Ko Obayashi
Hiroshi Okuyama
Tetsuya Aruga
Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
description Abstract While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) $$\hbox {Bi}_2\hbox {Te}_3$$ Bi 2 Te 3 films by in situ four-point probe conductivity measurement. The impact of the vdW (Te–Te) interface appeared as a large conductivity increase with increasing thickness from 1 to 2 QL. Angle-resolved photoelectron spectroscopy and first-principles calculations reveal the confinement of bulk-like conduction band (CB) state into the vdW interface. Our analysis based on the Boltzmann equation showed that the conduction of the CB has a long mean free path compared to the surface-state conduction. This is mainly attributed to the spatial separation of the CB electrons and the donor defects located at the Bi sites.
format article
author Shinichiro Hatta
Ko Obayashi
Hiroshi Okuyama
Tetsuya Aruga
author_facet Shinichiro Hatta
Ko Obayashi
Hiroshi Okuyama
Tetsuya Aruga
author_sort Shinichiro Hatta
title Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
title_short Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
title_full Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
title_fullStr Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
title_full_unstemmed Metallic conduction through van der Waals interfaces in ultrathin $$\hbox{Bi}_2\hbox{Te}_3$$ Bi 2 Te 3 films
title_sort metallic conduction through van der waals interfaces in ultrathin $$\hbox{bi}_2\hbox{te}_3$$ bi 2 te 3 films
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/8227bbf7549c4d1d8066a8e3a879eaf6
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AT koobayashi metallicconductionthroughvanderwaalsinterfacesinultrathinhboxbi2hboxte3bi2te3films
AT hiroshiokuyama metallicconductionthroughvanderwaalsinterfacesinultrathinhboxbi2hboxte3bi2te3films
AT tetsuyaaruga metallicconductionthroughvanderwaalsinterfacesinultrathinhboxbi2hboxte3bi2te3films
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