Electrically driven deep ultraviolet MgZnO lasers at room temperature

Abstract Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven dee...

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Autores principales:	Mohammad Suja, Sunayna Binte Bashar, Bishwajit Debnath, Longxing Su, Wenhao Shi, Roger Lake, Jianlin Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/829315251b2d49d0b0b8b8c5f91b0b33
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spelling	oai:doaj.org-article:829315251b2d49d0b0b8b8c5f91b0b332021-12-02T11:53:08ZElectrically driven deep ultraviolet MgZnO lasers at room temperature10.1038/s41598-017-02791-02045-2322https://doaj.org/article/829315251b2d49d0b0b8b8c5f91b0b332017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02791-0https://doaj.org/toc/2045-2322Abstract Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this paper, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29~33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.Mohammad SujaSunayna Binte BasharBishwajit DebnathLongxing SuWenhao ShiRoger LakeJianlin LiuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mohammad Suja Sunayna Binte Bashar Bishwajit Debnath Longxing Su Wenhao Shi Roger Lake Jianlin Liu Electrically driven deep ultraviolet MgZnO lasers at room temperature
description	Abstract Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this paper, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29~33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.
format	article
author	Mohammad Suja Sunayna Binte Bashar Bishwajit Debnath Longxing Su Wenhao Shi Roger Lake Jianlin Liu
author_facet	Mohammad Suja Sunayna Binte Bashar Bishwajit Debnath Longxing Su Wenhao Shi Roger Lake Jianlin Liu
author_sort	Mohammad Suja
title	Electrically driven deep ultraviolet MgZnO lasers at room temperature
title_short	Electrically driven deep ultraviolet MgZnO lasers at room temperature
title_full	Electrically driven deep ultraviolet MgZnO lasers at room temperature
title_fullStr	Electrically driven deep ultraviolet MgZnO lasers at room temperature
title_full_unstemmed	Electrically driven deep ultraviolet MgZnO lasers at room temperature
title_sort	electrically driven deep ultraviolet mgzno lasers at room temperature
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/829315251b2d49d0b0b8b8c5f91b0b33
work_keys_str_mv	AT mohammadsuja electricallydrivendeepultravioletmgznolasersatroomtemperature AT sunaynabintebashar electricallydrivendeepultravioletmgznolasersatroomtemperature AT bishwajitdebnath electricallydrivendeepultravioletmgznolasersatroomtemperature AT longxingsu electricallydrivendeepultravioletmgznolasersatroomtemperature AT wenhaoshi electricallydrivendeepultravioletmgznolasersatroomtemperature AT rogerlake electricallydrivendeepultravioletmgznolasersatroomtemperature AT jianlinliu electricallydrivendeepultravioletmgznolasersatroomtemperature
_version_	1718394875951448064

Electrically driven deep ultraviolet MgZnO lasers at room temperature

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