Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films...
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Nature Portfolio
2021
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oai:doaj.org-article:82a6e98253ee48408b0179fd04729b2a2021-12-02T15:02:48ZDistinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum10.1038/s41598-021-91141-22045-2322https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91141-2https://doaj.org/toc/2045-2322Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.A. S. KazakovA. V. GaleevaA. I. ArtamkinA. V. IkonnikovL. I. RyabovaS. A. DvoretskyN. N. MikhailovM. I. BannikovS. N. DanilovD. R. KhokhlovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021) |
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Medicine R Science Q A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
description |
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum. |
format |
article |
author |
A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov |
author_facet |
A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov |
author_sort |
A. S. Kazakov |
title |
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_short |
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_full |
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_fullStr |
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_full_unstemmed |
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_sort |
distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a |
work_keys_str_mv |
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1718389086687854592 |