Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films...

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Autores principales: A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, D. R. Khokhlov
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a
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spelling oai:doaj.org-article:82a6e98253ee48408b0179fd04729b2a2021-12-02T15:02:48ZDistinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum10.1038/s41598-021-91141-22045-2322https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91141-2https://doaj.org/toc/2045-2322Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.A. S. KazakovA. V. GaleevaA. I. ArtamkinA. V. IkonnikovL. I. RyabovaS. A. DvoretskyN. N. MikhailovM. I. BannikovS. N. DanilovD. R. KhokhlovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
A. S. Kazakov
A. V. Galeeva
A. I. Artamkin
A. V. Ikonnikov
L. I. Ryabova
S. A. Dvoretsky
N. N. Mikhailov
M. I. Bannikov
S. N. Danilov
D. R. Khokhlov
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
description Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
format article
author A. S. Kazakov
A. V. Galeeva
A. I. Artamkin
A. V. Ikonnikov
L. I. Ryabova
S. A. Dvoretsky
N. N. Mikhailov
M. I. Bannikov
S. N. Danilov
D. R. Khokhlov
author_facet A. S. Kazakov
A. V. Galeeva
A. I. Artamkin
A. V. Ikonnikov
L. I. Ryabova
S. A. Dvoretsky
N. N. Mikhailov
M. I. Bannikov
S. N. Danilov
D. R. Khokhlov
author_sort A. S. Kazakov
title Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_short Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_full Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_fullStr Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_full_unstemmed Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_sort distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a
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