Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments

The emissivity of typical SiC-based thermal protection materials was measured in-situ at a wide temperature range (800 ~ 2300°C) inside a plasma wind tunnel that was capable of simulating hypersonic environments on-ground. Based on it, the evolution mechanism dominated by dynamic oxidation was discu...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Liping Liu, Lingwei Yang, Haojun Ma, Jie Luo, Xueren Xiao, Changhao Zhao, Jun Zhang, Guolin Wang, Yiguang Wang
Formato:	article
Lenguaje:	EN
Publicado:	Taylor & Francis Group 2021
Materias:	emissivity radiation property thermal protection system plasma wind tunnel Clay industries. Ceramics. Glass TP785-869
Acceso en línea:	https://doaj.org/article/8317691b466f4c028ade1710b47ff5c9
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:8317691b466f4c028ade1710b47ff5c9
record_format	dspace
spelling	oai:doaj.org-article:8317691b466f4c028ade1710b47ff5c92021-11-11T14:23:43ZOxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments2187-076410.1080/21870764.2021.1999559https://doaj.org/article/8317691b466f4c028ade1710b47ff5c92021-11-01T00:00:00Zhttp://dx.doi.org/10.1080/21870764.2021.1999559https://doaj.org/toc/2187-0764The emissivity of typical SiC-based thermal protection materials was measured in-situ at a wide temperature range (800 ~ 2300°C) inside a plasma wind tunnel that was capable of simulating hypersonic environments on-ground. Based on it, the evolution mechanism dominated by dynamic oxidation was discussed. The results suggest an emissivity of Cf/SiC 0.84 ~ 0.88 at 858 ~ 1502°C, prior to “temperature jump”. If “temperature jump” emerged, the emissivity was decreased rapidly to ≈0.76. The emissivity drop was explained by the microstructural transition of the oxidized surfaces that were triggered by the dissipation of SiO2 oxide scale at 1600 ~ 1900°C. Similar emissivity evolution was observed in SiCf/SiC after “temperature jump”. The effect of temperature on the emissivity of ZrB2-SiC was more pronounced. It was increased from ≈0.73 to ≈0.98 at 1009 ~ 1297°C, and was plateaued at 1298 ~ 1497°C, ≈0.98. This was a consequence of the formation of higher percentage SiO2-rich layers. However, due to the dissipation of SiO2 and B2O3, the emissivity of ZrB2-SiC was declined at higher temperatures, from ≈0.98 (≈1497°C) to ≈0.85 (≈1768°C).Liping LiuLingwei YangHaojun MaJie LuoXueren XiaoChanghao ZhaoJun ZhangGuolin WangYiguang WangTaylor & Francis Grouparticleemissivityradiation propertythermal protection systemplasma wind tunnelClay industries. Ceramics. GlassTP785-869ENJournal of Asian Ceramic Societies, Vol 0, Iss 0, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	emissivity radiation property thermal protection system plasma wind tunnel Clay industries. Ceramics. Glass TP785-869
spellingShingle	emissivity radiation property thermal protection system plasma wind tunnel Clay industries. Ceramics. Glass TP785-869 Liping Liu Lingwei Yang Haojun Ma Jie Luo Xueren Xiao Changhao Zhao Jun Zhang Guolin Wang Yiguang Wang Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
description	The emissivity of typical SiC-based thermal protection materials was measured in-situ at a wide temperature range (800 ~ 2300°C) inside a plasma wind tunnel that was capable of simulating hypersonic environments on-ground. Based on it, the evolution mechanism dominated by dynamic oxidation was discussed. The results suggest an emissivity of Cf/SiC 0.84 ~ 0.88 at 858 ~ 1502°C, prior to “temperature jump”. If “temperature jump” emerged, the emissivity was decreased rapidly to ≈0.76. The emissivity drop was explained by the microstructural transition of the oxidized surfaces that were triggered by the dissipation of SiO2 oxide scale at 1600 ~ 1900°C. Similar emissivity evolution was observed in SiCf/SiC after “temperature jump”. The effect of temperature on the emissivity of ZrB2-SiC was more pronounced. It was increased from ≈0.73 to ≈0.98 at 1009 ~ 1297°C, and was plateaued at 1298 ~ 1497°C, ≈0.98. This was a consequence of the formation of higher percentage SiO2-rich layers. However, due to the dissipation of SiO2 and B2O3, the emissivity of ZrB2-SiC was declined at higher temperatures, from ≈0.98 (≈1497°C) to ≈0.85 (≈1768°C).
format	article
author	Liping Liu Lingwei Yang Haojun Ma Jie Luo Xueren Xiao Changhao Zhao Jun Zhang Guolin Wang Yiguang Wang
author_facet	Liping Liu Lingwei Yang Haojun Ma Jie Luo Xueren Xiao Changhao Zhao Jun Zhang Guolin Wang Yiguang Wang
author_sort	Liping Liu
title	Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
title_short	Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
title_full	Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
title_fullStr	Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
title_full_unstemmed	Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
title_sort	oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments
publisher	Taylor & Francis Group
publishDate	2021
url	https://doaj.org/article/8317691b466f4c028ade1710b47ff5c9
work_keys_str_mv	AT lipingliu oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT lingweiyang oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT haojunma oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT jieluo oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT xuerenxiao oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT changhaozhao oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT junzhang oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT guolinwang oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments AT yiguangwang oxidationinducedemissivityevolutionofsiliconcarbidebasedthermalprotectionmaterialsinhypersonicenvironments
_version_	1718438952801665024

Oxidation induced emissivity evolution of silicon carbide based thermal protection materials in hypersonic environments

Ejemplares similares