High operating temperature in V-based superconducting quantum interference proximity transistors

Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to...

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Autores principales: Nadia Ligato, Giampiero Marchegiani, Pauli Virtanen, Elia Strambini, Francesco Giazotto
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/831908d12eee4650bea51181578d5f4e
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spelling oai:doaj.org-article:831908d12eee4650bea51181578d5f4e2021-12-02T16:06:42ZHigh operating temperature in V-based superconducting quantum interference proximity transistors10.1038/s41598-017-09036-02045-2322https://doaj.org/article/831908d12eee4650bea51181578d5f4e2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-09036-0https://doaj.org/toc/2045-2322Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to-current (above 12 nA/Φ0) transfer functions, with the best estimated flux sensitivity ~ 2.6 μΦ0/(Hz)1/2 reached under fixed voltage bias, where Φ0 is the flux quantum. The interferometers operate up to T bath  $$\simeq $$ ≃  2 K, with an improvement of 70% of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.Nadia LigatoGiampiero MarchegianiPauli VirtanenElia StrambiniFrancesco GiazottoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Nadia Ligato
Giampiero Marchegiani
Pauli Virtanen
Elia Strambini
Francesco Giazotto
High operating temperature in V-based superconducting quantum interference proximity transistors
description Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to-current (above 12 nA/Φ0) transfer functions, with the best estimated flux sensitivity ~ 2.6 μΦ0/(Hz)1/2 reached under fixed voltage bias, where Φ0 is the flux quantum. The interferometers operate up to T bath  $$\simeq $$ ≃  2 K, with an improvement of 70% of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.
format article
author Nadia Ligato
Giampiero Marchegiani
Pauli Virtanen
Elia Strambini
Francesco Giazotto
author_facet Nadia Ligato
Giampiero Marchegiani
Pauli Virtanen
Elia Strambini
Francesco Giazotto
author_sort Nadia Ligato
title High operating temperature in V-based superconducting quantum interference proximity transistors
title_short High operating temperature in V-based superconducting quantum interference proximity transistors
title_full High operating temperature in V-based superconducting quantum interference proximity transistors
title_fullStr High operating temperature in V-based superconducting quantum interference proximity transistors
title_full_unstemmed High operating temperature in V-based superconducting quantum interference proximity transistors
title_sort high operating temperature in v-based superconducting quantum interference proximity transistors
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/831908d12eee4650bea51181578d5f4e
work_keys_str_mv AT nadialigato highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
AT giampieromarchegiani highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
AT paulivirtanen highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
AT eliastrambini highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
AT francescogiazotto highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
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