High operating temperature in V-based superconducting quantum interference proximity transistors

Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to...

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Auteurs principaux:	Nadia Ligato, Giampiero Marchegiani, Pauli Virtanen, Elia Strambini, Francesco Giazotto
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2017
Sujets:	Medicine R Science Q
Accès en ligne:	https://doaj.org/article/831908d12eee4650bea51181578d5f4e
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spelling	oai:doaj.org-article:831908d12eee4650bea51181578d5f4e2021-12-02T16:06:42ZHigh operating temperature in V-based superconducting quantum interference proximity transistors10.1038/s41598-017-09036-02045-2322https://doaj.org/article/831908d12eee4650bea51181578d5f4e2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-09036-0https://doaj.org/toc/2045-2322Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to-current (above 12 nA/Φ0) transfer functions, with the best estimated flux sensitivity ~ 2.6 μΦ0/(Hz)1/2 reached under fixed voltage bias, where Φ0 is the flux quantum. The interferometers operate up to T bath $$\simeq $$ ≃ 2 K, with an improvement of 70% of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.Nadia LigatoGiampiero MarchegianiPauli VirtanenElia StrambiniFrancesco GiazottoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nadia Ligato Giampiero Marchegiani Pauli Virtanen Elia Strambini Francesco Giazotto High operating temperature in V-based superconducting quantum interference proximity transistors
description	Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to-current (above 12 nA/Φ0) transfer functions, with the best estimated flux sensitivity ~ 2.6 μΦ0/(Hz)1/2 reached under fixed voltage bias, where Φ0 is the flux quantum. The interferometers operate up to T bath $$\simeq $$ ≃ 2 K, with an improvement of 70% of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.
format	article
author	Nadia Ligato Giampiero Marchegiani Pauli Virtanen Elia Strambini Francesco Giazotto
author_facet	Nadia Ligato Giampiero Marchegiani Pauli Virtanen Elia Strambini Francesco Giazotto
author_sort	Nadia Ligato
title	High operating temperature in V-based superconducting quantum interference proximity transistors
title_short	High operating temperature in V-based superconducting quantum interference proximity transistors
title_full	High operating temperature in V-based superconducting quantum interference proximity transistors
title_fullStr	High operating temperature in V-based superconducting quantum interference proximity transistors
title_full_unstemmed	High operating temperature in V-based superconducting quantum interference proximity transistors
title_sort	high operating temperature in v-based superconducting quantum interference proximity transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/831908d12eee4650bea51181578d5f4e
work_keys_str_mv	AT nadialigato highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors AT giampieromarchegiani highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors AT paulivirtanen highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors AT eliastrambini highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors AT francescogiazotto highoperatingtemperatureinvbasedsuperconductingquantuminterferenceproximitytransistors
_version_	1718384911323234304

High operating temperature in V-based superconducting quantum interference proximity transistors

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