High operating temperature in V-based superconducting quantum interference proximity transistors
Abstract Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52 mV/Φ0) and flux-to...
Guardado en:
Autores principales: | Nadia Ligato, Giampiero Marchegiani, Pauli Virtanen, Elia Strambini, Francesco Giazotto |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/831908d12eee4650bea51181578d5f4e |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Preliminary demonstration of a persistent Josephson phase-slip memory cell with topological protection
por: Nadia Ligato, et al.
Publicado: (2021) -
Microwave response in a topological superconducting quantum interference device
por: Wei Pan, et al.
Publicado: (2021) -
MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
por: Y. O. Onikienko, et al.
Publicado: (2020) -
Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip
por: C. Schuck, et al.
Publicado: (2016) -
Quantum transport in a single molecular transistor at finite temperature
por: Manasa Kalla, et al.
Publicado: (2021)