One-dimensional electron gas in strained lateral heterostructures of single layer materials

Abstract Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a prominent example. A heterojunction of two materia...

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Autor principal:	O. Rubel
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/834082fa744a4dd2bc15425ebadfa287
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spelling	oai:doaj.org-article:834082fa744a4dd2bc15425ebadfa2872021-12-02T16:07:05ZOne-dimensional electron gas in strained lateral heterostructures of single layer materials10.1038/s41598-017-03880-w2045-2322https://doaj.org/article/834082fa744a4dd2bc15425ebadfa2872017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03880-whttps://doaj.org/toc/2045-2322Abstract Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a prominent example. A heterojunction of two materials with dissimilar electronic polarisation can be used for engineering of the conducting channel. Extension of this concept to single-layer materials leads to one-dimensional electron gas (1DEG). MoS2/WS2 lateral heterostructure is used as a prototype for the realisation of 1DEG. The electronic polarisation discontinuity is achieved by straining the heterojunction taking advantage of dissimilarities in the piezoelectric coupling between MoS2 and WS2. A complete theory that describes an induced electric field profile in lateral heterojunctions of two-dimensional materials is proposed and verified by first principle calculations.O. RubelNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q O. Rubel One-dimensional electron gas in strained lateral heterostructures of single layer materials
description	Abstract Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a prominent example. A heterojunction of two materials with dissimilar electronic polarisation can be used for engineering of the conducting channel. Extension of this concept to single-layer materials leads to one-dimensional electron gas (1DEG). MoS2/WS2 lateral heterostructure is used as a prototype for the realisation of 1DEG. The electronic polarisation discontinuity is achieved by straining the heterojunction taking advantage of dissimilarities in the piezoelectric coupling between MoS2 and WS2. A complete theory that describes an induced electric field profile in lateral heterojunctions of two-dimensional materials is proposed and verified by first principle calculations.
format	article
author	O. Rubel
author_facet	O. Rubel
author_sort	O. Rubel
title	One-dimensional electron gas in strained lateral heterostructures of single layer materials
title_short	One-dimensional electron gas in strained lateral heterostructures of single layer materials
title_full	One-dimensional electron gas in strained lateral heterostructures of single layer materials
title_fullStr	One-dimensional electron gas in strained lateral heterostructures of single layer materials
title_full_unstemmed	One-dimensional electron gas in strained lateral heterostructures of single layer materials
title_sort	one-dimensional electron gas in strained lateral heterostructures of single layer materials
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/834082fa744a4dd2bc15425ebadfa287
work_keys_str_mv	AT orubel onedimensionalelectrongasinstrainedlateralheterostructuresofsinglelayermaterials
_version_	1718384727630544896

One-dimensional electron gas in strained lateral heterostructures of single layer materials

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