Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress

A novel theoretical mathematical-physics model is obtained when the microstretch properties of elastic semiconductor medium are taken into account. This model is investigated in the context of photo-excitation transport processes through the thermoelasticity theory. The new model can be called Micro...

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Autores principales:	Abdulkafi M. Saeed, Kh. Lotfy, A. El-Bary, M.H. Ahmed
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Microelectronics Initial stress Thermoelastic effects Optical energy Rotation Photogenerated carriers Physics QC1-999
Acceso en línea:	https://doaj.org/article/83d4bd34f0614ca0a22a7d542a91a9a9
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spelling	oai:doaj.org-article:83d4bd34f0614ca0a22a7d542a91a9a92021-11-12T04:31:49ZThermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress2211-379710.1016/j.rinp.2021.104967https://doaj.org/article/83d4bd34f0614ca0a22a7d542a91a9a92021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721009827https://doaj.org/toc/2211-3797A novel theoretical mathematical-physics model is obtained when the microstretch properties of elastic semiconductor medium are taken into account. This model is investigated in the context of photo-excitation transport processes through the thermoelasticity theory. The new model can be called Microstretch-photo-thermoelasticity (MPT) theory. The MPT model is studied under the impact of hydrostatic initial stress. The carrier’s charge field (carrier density or plasma wave) appears due to optical excitation. In this model, the interaction between thermal–mechanical-plasma waves is obtained when the medium is in a rotating case. When the medium is linear, isotropic and homogenous, the two-dimensional (2D) elastic and electronic deformations governing equations are investigated. This is done while taking into account the microinertia of the medium particles. The basic physical variables are obtained using the mathematical plane harmonic wave technique to obtain the general solutions. The complete analytical solutions are solved when conditions from mechanical-thermal and plasma type act at the free surface of the medium. The silicon (Si) and Germanium (Ge) materials are used to make the numerical simulations. The numerical results are displayed graphically and discussed.Abdulkafi M. SaeedKh. LotfyA. El-BaryM.H. AhmedElsevierarticleMicroelectronicsInitial stressThermoelastic effectsOptical energyRotationPhotogenerated carriersPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 104967- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Microelectronics Initial stress Thermoelastic effects Optical energy Rotation Photogenerated carriers Physics QC1-999
spellingShingle	Microelectronics Initial stress Thermoelastic effects Optical energy Rotation Photogenerated carriers Physics QC1-999 Abdulkafi M. Saeed Kh. Lotfy A. El-Bary M.H. Ahmed Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
description	A novel theoretical mathematical-physics model is obtained when the microstretch properties of elastic semiconductor medium are taken into account. This model is investigated in the context of photo-excitation transport processes through the thermoelasticity theory. The new model can be called Microstretch-photo-thermoelasticity (MPT) theory. The MPT model is studied under the impact of hydrostatic initial stress. The carrier’s charge field (carrier density or plasma wave) appears due to optical excitation. In this model, the interaction between thermal–mechanical-plasma waves is obtained when the medium is in a rotating case. When the medium is linear, isotropic and homogenous, the two-dimensional (2D) elastic and electronic deformations governing equations are investigated. This is done while taking into account the microinertia of the medium particles. The basic physical variables are obtained using the mathematical plane harmonic wave technique to obtain the general solutions. The complete analytical solutions are solved when conditions from mechanical-thermal and plasma type act at the free surface of the medium. The silicon (Si) and Germanium (Ge) materials are used to make the numerical simulations. The numerical results are displayed graphically and discussed.
format	article
author	Abdulkafi M. Saeed Kh. Lotfy A. El-Bary M.H. Ahmed
author_facet	Abdulkafi M. Saeed Kh. Lotfy A. El-Bary M.H. Ahmed
author_sort	Abdulkafi M. Saeed
title	Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
title_short	Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
title_full	Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
title_fullStr	Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
title_full_unstemmed	Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
title_sort	thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/83d4bd34f0614ca0a22a7d542a91a9a9
work_keys_str_mv	AT abdulkafimsaeed thermoelasticwithphotogeneratedmodelofrotatingmicrostretchsemiconductormediumundertheinfluenceofinitialstress AT khlotfy thermoelasticwithphotogeneratedmodelofrotatingmicrostretchsemiconductormediumundertheinfluenceofinitialstress AT aelbary thermoelasticwithphotogeneratedmodelofrotatingmicrostretchsemiconductormediumundertheinfluenceofinitialstress AT mhahmed thermoelasticwithphotogeneratedmodelofrotatingmicrostretchsemiconductormediumundertheinfluenceofinitialstress
_version_	1718431300222713856

Thermoelastic with photogenerated model of rotating microstretch semiconductor medium under the influence of initial stress

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