Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy

Abstract The band alignment at an Al2O3/SrTiO3 heterointerface forming a two-dimensional electron gas (2DEG) was investigated using scanning photocurrent microscopy (SPCM) in an electrolyte-gated environment. We used a focused UV laser source for above-the-bandgap illumination on the SrTiO3 layer, c...

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Autores principales:	J. H. Yoon, H. J. Jung, J. T. Hong, Ji-Yong Park, Soonil Lee, S. W. Lee, Y. H. Ahn
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8418fa99bda8476cb1f9c4795cab38e9
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spelling	oai:doaj.org-article:8418fa99bda8476cb1f9c4795cab38e92021-12-02T12:32:28ZElectronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy10.1038/s41598-017-04265-92045-2322https://doaj.org/article/8418fa99bda8476cb1f9c4795cab38e92017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04265-9https://doaj.org/toc/2045-2322Abstract The band alignment at an Al2O3/SrTiO3 heterointerface forming a two-dimensional electron gas (2DEG) was investigated using scanning photocurrent microscopy (SPCM) in an electrolyte-gated environment. We used a focused UV laser source for above-the-bandgap illumination on the SrTiO3 layer, creating electron-hole pairs that contributed to the photocurrent through migration towards the metal electrodes. The polarity of the SPCM signals of a bare SrTiO3 device shows typical p-type behavior at zero gate bias, in which the photogenerated electrons are collected by the electrodes. In contrast, the SPCM polarity of 2DEG device indicates that the hole carriers were collected by the metal electrodes. Careful transport measurements revealed that the gate-dependent conductance of the 2DEG devices exhibits n-type switching behavior. More importantly, the SPCM signals in 2DEG devices demonstrated very unique gate-responses that cannot be found in conventional semiconducting devices, based on which we were able to perform detailed investigation into the electronic band alignment of the 2DEG devices and obtain the valence band offset at the heterointerface.J. H. YoonH. J. JungJ. T. HongJi-Yong ParkSoonil LeeS. W. LeeY. H. AhnNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q J. H. Yoon H. J. Jung J. T. Hong Ji-Yong Park Soonil Lee S. W. Lee Y. H. Ahn Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
description	Abstract The band alignment at an Al2O3/SrTiO3 heterointerface forming a two-dimensional electron gas (2DEG) was investigated using scanning photocurrent microscopy (SPCM) in an electrolyte-gated environment. We used a focused UV laser source for above-the-bandgap illumination on the SrTiO3 layer, creating electron-hole pairs that contributed to the photocurrent through migration towards the metal electrodes. The polarity of the SPCM signals of a bare SrTiO3 device shows typical p-type behavior at zero gate bias, in which the photogenerated electrons are collected by the electrodes. In contrast, the SPCM polarity of 2DEG device indicates that the hole carriers were collected by the metal electrodes. Careful transport measurements revealed that the gate-dependent conductance of the 2DEG devices exhibits n-type switching behavior. More importantly, the SPCM signals in 2DEG devices demonstrated very unique gate-responses that cannot be found in conventional semiconducting devices, based on which we were able to perform detailed investigation into the electronic band alignment of the 2DEG devices and obtain the valence band offset at the heterointerface.
format	article
author	J. H. Yoon H. J. Jung J. T. Hong Ji-Yong Park Soonil Lee S. W. Lee Y. H. Ahn
author_facet	J. H. Yoon H. J. Jung J. T. Hong Ji-Yong Park Soonil Lee S. W. Lee Y. H. Ahn
author_sort	J. H. Yoon
title	Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
title_short	Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
title_full	Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
title_fullStr	Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
title_full_unstemmed	Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy
title_sort	electronic band alignment at complex oxide interfaces measured by scanning photocurrent microscopy
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/8418fa99bda8476cb1f9c4795cab38e9
work_keys_str_mv	AT jhyoon electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT hjjung electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT jthong electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT jiyongpark electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT soonillee electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT swlee electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy AT yhahn electronicbandalignmentatcomplexoxideinterfacesmeasuredbyscanningphotocurrentmicroscopy
_version_	1718394044964405248

Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy

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