Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease o...

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Autores principales: Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, Kuo-Pin Chiu, Ji-Lin Shen, Ting-Chun Wang, Hao-Chung Kuo, Ching-Hsueh Chiu, Yung-Chi Yao, Ya-Ju Lee
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/84637e9ed34047bf8788a2fa47890714
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spelling oai:doaj.org-article:84637e9ed34047bf8788a2fa478907142021-12-02T12:32:46ZEnhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots10.1038/s41598-017-07483-32045-2322https://doaj.org/article/84637e9ed34047bf8788a2fa478907142017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07483-3https://doaj.org/toc/2045-2322Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.Tzu-Neng LinSvette Reina Merden SantiagoChi-Tsu YuanKuo-Pin ChiuJi-Lin ShenTing-Chun WangHao-Chung KuoChing-Hsueh ChiuYung-Chi YaoYa-Ju LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Tzu-Neng Lin
Svette Reina Merden Santiago
Chi-Tsu Yuan
Kuo-Pin Chiu
Ji-Lin Shen
Ting-Chun Wang
Hao-Chung Kuo
Ching-Hsueh Chiu
Yung-Chi Yao
Ya-Ju Lee
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
description Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.
format article
author Tzu-Neng Lin
Svette Reina Merden Santiago
Chi-Tsu Yuan
Kuo-Pin Chiu
Ji-Lin Shen
Ting-Chun Wang
Hao-Chung Kuo
Ching-Hsueh Chiu
Yung-Chi Yao
Ya-Ju Lee
author_facet Tzu-Neng Lin
Svette Reina Merden Santiago
Chi-Tsu Yuan
Kuo-Pin Chiu
Ji-Lin Shen
Ting-Chun Wang
Hao-Chung Kuo
Ching-Hsueh Chiu
Yung-Chi Yao
Ya-Ju Lee
author_sort Tzu-Neng Lin
title Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
title_short Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
title_full Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
title_fullStr Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
title_full_unstemmed Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
title_sort enhanced performance of gan-based ultraviolet light emitting diodes by photon recycling using graphene quantum dots
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/84637e9ed34047bf8788a2fa47890714
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