Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease o...

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Autores principales: Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, Kuo-Pin Chiu, Ji-Lin Shen, Ting-Chun Wang, Hao-Chung Kuo, Ching-Hsueh Chiu, Yung-Chi Yao, Ya-Ju Lee
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/84637e9ed34047bf8788a2fa47890714
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