Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure

Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an ex...

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Autores principales: Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki, Aoi Morishita, Akihiro Kawano, Yosuke Sasama, Takahide Yamaguchi, Yoshihiko Takano, Minoru Tachiki, Shuuichi Ooi, Kazuto Hirata, Shunichi Arisawa, Hiroshi Kawarada
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Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/84793a3f5f8e4bd3bf7e68ce85b1f11c
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spelling oai:doaj.org-article:84793a3f5f8e4bd3bf7e68ce85b1f11c2021-12-02T15:09:37ZSingle-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure10.1038/s41598-019-51596-w2045-2322https://doaj.org/article/84793a3f5f8e4bd3bf7e68ce85b1f11c2019-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-51596-whttps://doaj.org/toc/2045-2322Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor–weak superconductor–superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.Taisuke KageuraMasakuni HidekoIkuto TsuyuzakiAoi MorishitaAkihiro KawanoYosuke SasamaTakahide YamaguchiYoshihiko TakanoMinoru TachikiShuuichi OoiKazuto HirataShunichi ArisawaHiroshi KawaradaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Taisuke Kageura
Masakuni Hideko
Ikuto Tsuyuzaki
Aoi Morishita
Akihiro Kawano
Yosuke Sasama
Takahide Yamaguchi
Yoshihiko Takano
Minoru Tachiki
Shuuichi Ooi
Kazuto Hirata
Shunichi Arisawa
Hiroshi Kawarada
Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
description Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor–weak superconductor–superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.
format article
author Taisuke Kageura
Masakuni Hideko
Ikuto Tsuyuzaki
Aoi Morishita
Akihiro Kawano
Yosuke Sasama
Takahide Yamaguchi
Yoshihiko Takano
Minoru Tachiki
Shuuichi Ooi
Kazuto Hirata
Shunichi Arisawa
Hiroshi Kawarada
author_facet Taisuke Kageura
Masakuni Hideko
Ikuto Tsuyuzaki
Aoi Morishita
Akihiro Kawano
Yosuke Sasama
Takahide Yamaguchi
Yoshihiko Takano
Minoru Tachiki
Shuuichi Ooi
Kazuto Hirata
Shunichi Arisawa
Hiroshi Kawarada
author_sort Taisuke Kageura
title Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
title_short Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
title_full Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
title_fullStr Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
title_full_unstemmed Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
title_sort single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/84793a3f5f8e4bd3bf7e68ce85b1f11c
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