Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
Phonons manifest themselves in all electrical, thermal, optical and noise phenomena in semiconductors. Reduction of the feature size of electronic devices below the acoustic phonon mean free path creates a new situation for the phonon transport. On the one hand, the phonon– rough boundary scatter...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/84ad6161b8674cf2b2742d16d7ca135d |
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| Sumario: | Phonons manifest themselves in all electrical, thermal, optical and noise phenomena in
semiconductors. Reduction of the feature size of electronic devices below the acoustic phonon
mean free path creates a new situation for the phonon transport. On the one hand, the phonon–
rough boundary scattering complicates heat removal from the downscaled devices. On the
other hand, spatial confinement of the acoustic phonons creates an opportunity for intelligent
tuning of the phonon dispersion in semiconductor nanostructures and achieving enhanced
operation of devices based on these nanostructures. This paper presents a brief review of the
recent developments in the field of nanophononics. Specifically, it focuses on methods of tuning the phonon spectrum in acoustically mismatched nano- and heterostructures in order to
change the electron mobility and phonon thermal conductivity.
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