Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures

Phonons manifest themselves in all electrical, thermal, optical and noise phenomena in semiconductors. Reduction of the feature size of electronic devices below the acoustic phonon mean free path creates a new situation for the phonon transport. On the one hand, the phonon– rough boundary scatter...

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Autor principal: Balandin, Anton
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
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Acceso en línea:https://doaj.org/article/84ad6161b8674cf2b2742d16d7ca135d
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spelling oai:doaj.org-article:84ad6161b8674cf2b2742d16d7ca135d2021-11-21T12:08:28ZNanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures 2537-63651810-648Xhttps://doaj.org/article/84ad6161b8674cf2b2742d16d7ca135d2007-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3622https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Phonons manifest themselves in all electrical, thermal, optical and noise phenomena in semiconductors. Reduction of the feature size of electronic devices below the acoustic phonon mean free path creates a new situation for the phonon transport. On the one hand, the phonon– rough boundary scattering complicates heat removal from the downscaled devices. On the other hand, spatial confinement of the acoustic phonons creates an opportunity for intelligent tuning of the phonon dispersion in semiconductor nanostructures and achieving enhanced operation of devices based on these nanostructures. This paper presents a brief review of the recent developments in the field of nanophononics. Specifically, it focuses on methods of tuning the phonon spectrum in acoustically mismatched nano- and heterostructures in order to change the electron mobility and phonon thermal conductivity. Balandin, AntonD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 1, Pp 32-38 (2007)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Balandin, Anton
Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
description Phonons manifest themselves in all electrical, thermal, optical and noise phenomena in semiconductors. Reduction of the feature size of electronic devices below the acoustic phonon mean free path creates a new situation for the phonon transport. On the one hand, the phonon– rough boundary scattering complicates heat removal from the downscaled devices. On the other hand, spatial confinement of the acoustic phonons creates an opportunity for intelligent tuning of the phonon dispersion in semiconductor nanostructures and achieving enhanced operation of devices based on these nanostructures. This paper presents a brief review of the recent developments in the field of nanophononics. Specifically, it focuses on methods of tuning the phonon spectrum in acoustically mismatched nano- and heterostructures in order to change the electron mobility and phonon thermal conductivity.
format article
author Balandin, Anton
author_facet Balandin, Anton
author_sort Balandin, Anton
title Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
title_short Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
title_full Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
title_fullStr Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
title_full_unstemmed Nanophononics: Fine-tuning phonon dispersion in semiconductor nanostructures
title_sort nanophononics: fine-tuning phonon dispersion in semiconductor nanostructures
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2007
url https://doaj.org/article/84ad6161b8674cf2b2742d16d7ca135d
work_keys_str_mv AT balandinanton nanophononicsfinetuningphonondispersioninsemiconductornanostructures
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