An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of th...

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Autores principales:	Y. Pei, Amgad A. Al-Saman, Chengong Yin, Eugeny A. Ryndin, Fujiang Lin
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Gallium nitride high electron mobility transistors frequency dispersion small-signal model Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/84d1037de96c4715b8aabe82a8cd4c13
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spelling	oai:doaj.org-article:84d1037de96c4715b8aabe82a8cd4c132021-11-18T00:00:36ZAn Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation2168-673410.1109/JEDS.2021.3124327https://doaj.org/article/84d1037de96c4715b8aabe82a8cd4c132021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9596572/https://doaj.org/toc/2168-6734High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s- parameters have validated the proposed approach.Y. PeiAmgad A. Al-SamanChengong YinEugeny A. RyndinFujiang LinIEEEarticleGallium nitridehigh electron mobility transistorsfrequency dispersionsmall-signal modelElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1060-1065 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Gallium nitride high electron mobility transistors frequency dispersion small-signal model Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Gallium nitride high electron mobility transistors frequency dispersion small-signal model Electrical engineering. Electronics. Nuclear engineering TK1-9971 Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
description	High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s- parameters have validated the proposed approach.
format	article
author	Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin
author_facet	Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin
author_sort	Y. Pei
title	An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
title_short	An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
title_full	An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
title_fullStr	An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
title_full_unstemmed	An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
title_sort	intrinsic small-signal equivalent circuit model for algan/gan hemt considering the momentum balance equation
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/84d1037de96c4715b8aabe82a8cd4c13
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An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

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