An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of th...

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Auteurs principaux: Y. Pei, Amgad A. Al-Saman, Chengong Yin, Eugeny A. Ryndin, Fujiang Lin
Format: article
Langue:EN
Publié: IEEE 2021
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Accès en ligne:https://doaj.org/article/84d1037de96c4715b8aabe82a8cd4c13
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