Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance

Abstract Infrared transparent electrodes (IR-TEs) have recently attracted much attention for industrial and military applications. The simplest method to obtain high IR transmittance is to reduce the electrode film thickness. However, for films several tens of nanometres thick, this approach uninten...

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Autores principales:	Dongha Kim, Shinbuhm Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8516d84b1fc642f48f90fcc260c12436
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spelling	oai:doaj.org-article:8516d84b1fc642f48f90fcc260c124362021-12-02T16:31:18ZPersistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance10.1038/s41598-020-61772-y2045-2322https://doaj.org/article/8516d84b1fc642f48f90fcc260c124362020-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-61772-yhttps://doaj.org/toc/2045-2322Abstract Infrared transparent electrodes (IR-TEs) have recently attracted much attention for industrial and military applications. The simplest method to obtain high IR transmittance is to reduce the electrode film thickness. However, for films several tens of nanometres thick, this approach unintentionally suppresses conduction due to surface electron scattering. Here, we demonstrate low sheet resistance (<400 Ω □−1 at room temperature) and high IR transmittance (>65% at the 2.5-μm wavelength) in Sn-doped In2O3 (ITO) epitaxial films for the thickness range of 17−80 nm. A combination of X-ray spectroscopy and ellipsometry measurements reveals a persistent electronic bandstructure in the 8-nm-thick film compared to much thicker films. This indicates that the metallicity of the film is preserved, despite the ultrathin film configuration. The high carrier mobility in the ITO epitaxial films further confirms the film’s metallicity as a result of the improved crystallinity of the film and the resulting reduction in the scattering defect concentration. Thus, ITO shows great potential for IR-TE applications of transparent photovoltaic and optoelectronic devices.Dongha KimShinbuhm LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dongha Kim Shinbuhm Lee Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
description	Abstract Infrared transparent electrodes (IR-TEs) have recently attracted much attention for industrial and military applications. The simplest method to obtain high IR transmittance is to reduce the electrode film thickness. However, for films several tens of nanometres thick, this approach unintentionally suppresses conduction due to surface electron scattering. Here, we demonstrate low sheet resistance (<400 Ω □−1 at room temperature) and high IR transmittance (>65% at the 2.5-μm wavelength) in Sn-doped In2O3 (ITO) epitaxial films for the thickness range of 17−80 nm. A combination of X-ray spectroscopy and ellipsometry measurements reveals a persistent electronic bandstructure in the 8-nm-thick film compared to much thicker films. This indicates that the metallicity of the film is preserved, despite the ultrathin film configuration. The high carrier mobility in the ITO epitaxial films further confirms the film’s metallicity as a result of the improved crystallinity of the film and the resulting reduction in the scattering defect concentration. Thus, ITO shows great potential for IR-TE applications of transparent photovoltaic and optoelectronic devices.
format	article
author	Dongha Kim Shinbuhm Lee
author_facet	Dongha Kim Shinbuhm Lee
author_sort	Dongha Kim
title	Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
title_short	Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
title_full	Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
title_fullStr	Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
title_full_unstemmed	Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance
title_sort	persistent metallic sn-doped in2o3 epitaxial ultrathin films with enhanced infrared transmittance
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/8516d84b1fc642f48f90fcc260c12436
work_keys_str_mv	AT donghakim persistentmetallicsndopedin2o3epitaxialultrathinfilmswithenhancedinfraredtransmittance AT shinbuhmlee persistentmetallicsndopedin2o3epitaxialultrathinfilmswithenhancedinfraredtransmittance
_version_	1718383885906083840

Persistent metallic Sn-doped In2O3 epitaxial ultrathin films with enhanced infrared transmittance

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