Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

Abstract In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jiakai Li, Arash Dehzangi, Gail Brown, Manijeh Razeghi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8584c6b294c44ca6a7117e61a6aff292
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:8584c6b294c44ca6a7117e61a6aff292
record_format	dspace
spelling	oai:doaj.org-article:8584c6b294c44ca6a7117e61a6aff2922021-12-02T13:27:04ZMid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice10.1038/s41598-021-86566-82045-2322https://doaj.org/article/8584c6b294c44ca6a7117e61a6aff2922021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86566-8https://doaj.org/toc/2045-2322Abstract In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K.Jiakai LiArash DehzangiGail BrownManijeh RazeghiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jiakai Li Arash Dehzangi Gail Brown Manijeh Razeghi Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
description	Abstract In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K.
format	article
author	Jiakai Li Arash Dehzangi Gail Brown Manijeh Razeghi
author_facet	Jiakai Li Arash Dehzangi Gail Brown Manijeh Razeghi
author_sort	Jiakai Li
title	Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
title_short	Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
title_full	Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
title_fullStr	Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
title_full_unstemmed	Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
title_sort	mid-wavelength infrared avalanche photodetector with alassb/gasb superlattice
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8584c6b294c44ca6a7117e61a6aff292
work_keys_str_mv	AT jiakaili midwavelengthinfraredavalanchephotodetectorwithalassbgasbsuperlattice AT arashdehzangi midwavelengthinfraredavalanchephotodetectorwithalassbgasbsuperlattice AT gailbrown midwavelengthinfraredavalanchephotodetectorwithalassbgasbsuperlattice AT manijehrazeghi midwavelengthinfraredavalanchephotodetectorwithalassbgasbsuperlattice
_version_	1718393042797330432

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

Ejemplares similares