Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

Abstract In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche...

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Autores principales: Jiakai Li, Arash Dehzangi, Gail Brown, Manijeh Razeghi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/8584c6b294c44ca6a7117e61a6aff292
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