A foundation for complex oxide electronics -low temperature perovskite epitaxy

Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electron...

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Autores principales: Henrik H. Sønsteby, Erik Skaar, Øystein S. Fjellvåg, Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
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Sumario:Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electronic properties.