A foundation for complex oxide electronics -low temperature perovskite epitaxy

Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electron...

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Autores principales:	Henrik H. Sønsteby, Erik Skaar, Øystein S. Fjellvåg, Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
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spelling	oai:doaj.org-article:858df9fbe6db442192e21b1321a27b4e2021-12-02T17:47:59ZA foundation for complex oxide electronics -low temperature perovskite epitaxy10.1038/s41467-020-16654-22041-1723https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e2020-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16654-2https://doaj.org/toc/2041-1723Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electronic properties.Henrik H. SønstebyErik SkaarØystein S. FjellvågJon E. BratvoldHelmer FjellvågOla NilsenNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Henrik H. Sønsteby Erik Skaar Øystein S. Fjellvåg Jon E. Bratvold Helmer Fjellvåg Ola Nilsen A foundation for complex oxide electronics -low temperature perovskite epitaxy
description	Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electronic properties.
format	article
author	Henrik H. Sønsteby Erik Skaar Øystein S. Fjellvåg Jon E. Bratvold Helmer Fjellvåg Ola Nilsen
author_facet	Henrik H. Sønsteby Erik Skaar Øystein S. Fjellvåg Jon E. Bratvold Helmer Fjellvåg Ola Nilsen
author_sort	Henrik H. Sønsteby
title	A foundation for complex oxide electronics -low temperature perovskite epitaxy
title_short	A foundation for complex oxide electronics -low temperature perovskite epitaxy
title_full	A foundation for complex oxide electronics -low temperature perovskite epitaxy
title_fullStr	A foundation for complex oxide electronics -low temperature perovskite epitaxy
title_full_unstemmed	A foundation for complex oxide electronics -low temperature perovskite epitaxy
title_sort	foundation for complex oxide electronics -low temperature perovskite epitaxy
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
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A foundation for complex oxide electronics -low temperature perovskite epitaxy

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