A foundation for complex oxide electronics -low temperature perovskite epitaxy
Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electron...
Saved in:
Main Authors: | Henrik H. Sønsteby, Erik Skaar, Øystein S. Fjellvåg, Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2020
|
Subjects: | |
Online Access: | https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Enhancement of Plasmonic Performance in Epitaxial Silver at Low Temperature
by: Liuyang Sun, et al.
Published: (2017) -
Three-dimensional atomic scale electron density reconstruction of octahedral tilt epitaxy in functional perovskites
by: Yakun Yuan, et al.
Published: (2018) -
Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
by: Yunkyu Park, et al.
Published: (2020) -
From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
by: Carla Lupo, et al.
Published: (2021) -
Carrier lifetime enhancement in halide perovskite via remote epitaxy
by: Jie Jiang, et al.
Published: (2019)