Relaxation processes under microindentation of InP crystals subjected to scratching deformation
The elastic strain relaxation was estimated by the use of the method of acoustic emis- sion signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single crystals and accordingly the...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/85b02724a0fb428fb731b456fb910f30 |
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| Sumario: | The elastic strain relaxation was estimated by the use of the method of acoustic emis-
sion signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single
crystals and accordingly the internal stresses were varied by the scratching method as well as
by the testing temperature (293÷723 K) and storage of predeformed crystals at room temperature.
It was shown that the relaxation processes are determined by the stress defect structure
state and are the predeformation temperature function. These processes are tightly related to
the internal strain stress, characterizing the start state of InP single crystals. |
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