Understanding memristive switching via in situ characterization and device modeling

Memristor as the fourth basic element of electric circuits has drawn substantial attention for developing future computing technologies. Sun et al. report the progress and the challenges facing researchers on understanding memristive switching, and advocate continuous studies using a synergistic app...

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Autores principales:	Wen Sun, Bin Gao, Miaofang Chi, Qiangfei Xia, J. Joshua Yang, He Qian, Huaqiang Wu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/85fe4729b88043f5a74ff36bba7744fe
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id	oai:doaj.org-article:85fe4729b88043f5a74ff36bba7744fe
record_format	dspace
spelling	oai:doaj.org-article:85fe4729b88043f5a74ff36bba7744fe2021-12-02T14:38:38ZUnderstanding memristive switching via in situ characterization and device modeling10.1038/s41467-019-11411-62041-1723https://doaj.org/article/85fe4729b88043f5a74ff36bba7744fe2019-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11411-6https://doaj.org/toc/2041-1723Memristor as the fourth basic element of electric circuits has drawn substantial attention for developing future computing technologies. Sun et al. report the progress and the challenges facing researchers on understanding memristive switching, and advocate continuous studies using a synergistic approach.Wen SunBin GaoMiaofang ChiQiangfei XiaJ. Joshua YangHe QianHuaqiang WuNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-13 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Wen Sun Bin Gao Miaofang Chi Qiangfei Xia J. Joshua Yang He Qian Huaqiang Wu Understanding memristive switching via in situ characterization and device modeling
description	Memristor as the fourth basic element of electric circuits has drawn substantial attention for developing future computing technologies. Sun et al. report the progress and the challenges facing researchers on understanding memristive switching, and advocate continuous studies using a synergistic approach.
format	article
author	Wen Sun Bin Gao Miaofang Chi Qiangfei Xia J. Joshua Yang He Qian Huaqiang Wu
author_facet	Wen Sun Bin Gao Miaofang Chi Qiangfei Xia J. Joshua Yang He Qian Huaqiang Wu
author_sort	Wen Sun
title	Understanding memristive switching via in situ characterization and device modeling
title_short	Understanding memristive switching via in situ characterization and device modeling
title_full	Understanding memristive switching via in situ characterization and device modeling
title_fullStr	Understanding memristive switching via in situ characterization and device modeling
title_full_unstemmed	Understanding memristive switching via in situ characterization and device modeling
title_sort	understanding memristive switching via in situ characterization and device modeling
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/85fe4729b88043f5a74ff36bba7744fe
work_keys_str_mv	AT wensun understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT bingao understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT miaofangchi understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT qiangfeixia understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT jjoshuayang understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT heqian understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling AT huaqiangwu understandingmemristiveswitchingviainsitucharacterizationanddevicemodeling
_version_	1718390905161908224

Understanding memristive switching via in situ characterization and device modeling

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