Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

The valley Hall effect in 2D materials is a promising approach for future valleytronic applications, but it is usually based on excitons with short lifetimes. Here, spin polarized electrons are injected from WTe2 into MoS2, leading to a unipolar valley Hall effect with enhanced lifetimes and mobilit...

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Autores principales: Jekwan Lee, Wonhyeok Heo, Myungjun Cha, Kenji Watanabe, Takashi Taniguchi, Jehyun Kim, Soonyoung Cha, Dohun Kim, Moon-Ho Jo, Hyunyong Choi
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/8629fd31b1e14cb5ae39626e1a68c90d
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spelling oai:doaj.org-article:8629fd31b1e14cb5ae39626e1a68c90d2021-12-02T15:52:19ZUltrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers10.1038/s41467-021-21013-w2041-1723https://doaj.org/article/8629fd31b1e14cb5ae39626e1a68c90d2021-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-21013-whttps://doaj.org/toc/2041-1723The valley Hall effect in 2D materials is a promising approach for future valleytronic applications, but it is usually based on excitons with short lifetimes. Here, spin polarized electrons are injected from WTe2 into MoS2, leading to a unipolar valley Hall effect with enhanced lifetimes and mobility.Jekwan LeeWonhyeok HeoMyungjun ChaKenji WatanabeTakashi TaniguchiJehyun KimSoonyoung ChaDohun KimMoon-Ho JoHyunyong ChoiNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-6 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Jekwan Lee
Wonhyeok Heo
Myungjun Cha
Kenji Watanabe
Takashi Taniguchi
Jehyun Kim
Soonyoung Cha
Dohun Kim
Moon-Ho Jo
Hyunyong Choi
Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
description The valley Hall effect in 2D materials is a promising approach for future valleytronic applications, but it is usually based on excitons with short lifetimes. Here, spin polarized electrons are injected from WTe2 into MoS2, leading to a unipolar valley Hall effect with enhanced lifetimes and mobility.
format article
author Jekwan Lee
Wonhyeok Heo
Myungjun Cha
Kenji Watanabe
Takashi Taniguchi
Jehyun Kim
Soonyoung Cha
Dohun Kim
Moon-Ho Jo
Hyunyong Choi
author_facet Jekwan Lee
Wonhyeok Heo
Myungjun Cha
Kenji Watanabe
Takashi Taniguchi
Jehyun Kim
Soonyoung Cha
Dohun Kim
Moon-Ho Jo
Hyunyong Choi
author_sort Jekwan Lee
title Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
title_short Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
title_full Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
title_fullStr Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
title_full_unstemmed Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers
title_sort ultrafast non-excitonic valley hall effect in mos2/wte2 heterobilayers
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/8629fd31b1e14cb5ae39626e1a68c90d
work_keys_str_mv AT jekwanlee ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT wonhyeokheo ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT myungjuncha ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT kenjiwatanabe ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT takashitaniguchi ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT jehyunkim ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT soonyoungcha ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT dohunkim ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT moonhojo ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
AT hyunyongchoi ultrafastnonexcitonicvalleyhalleffectinmos2wte2heterobilayers
_version_ 1718385583751954432