Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, thei...

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Autores principales:	Chen Hao, Chiasera Alessandro, Armellini Cristina, Speranza Giorgio, Varas Stefano, Sayginer Osman, Alfano Antonio, Cassinelli Marco, Caironi Mario, Suriano Raffaella, Zaghloul Mohamed, Tagliaferri Alberto, Ferrari Maurizio, Pietralunga Silvia M.
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/8652add9edcf42a09ee21e31b205a231
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spelling	oai:doaj.org-article:8652add9edcf42a09ee21e31b205a2312021-12-02T17:12:51ZNear-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering2100-014X10.1051/epjconf/202125505003https://doaj.org/article/8652add9edcf42a09ee21e31b205a2312021-01-01T00:00:00Zhttps://www.epj-conferences.org/articles/epjconf/pdf/2021/09/epjconf_eosam2021_05003.pdfhttps://doaj.org/toc/2100-014XKey assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.Chen HaoChiasera AlessandroArmellini CristinaSperanza GiorgioVaras StefanoSayginer OsmanAlfano AntonioCassinelli MarcoCaironi MarioSuriano RaffaellaZaghloul MohamedTagliaferri AlbertoFerrari MaurizioPietralunga Silvia M.EDP SciencesarticlePhysicsQC1-999ENEPJ Web of Conferences, Vol 255, p 05003 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Chen Hao Chiasera Alessandro Armellini Cristina Speranza Giorgio Varas Stefano Sayginer Osman Alfano Antonio Cassinelli Marco Caironi Mario Suriano Raffaella Zaghloul Mohamed Tagliaferri Alberto Ferrari Maurizio Pietralunga Silvia M. Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
description	Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
format	article
author	Chen Hao Chiasera Alessandro Armellini Cristina Speranza Giorgio Varas Stefano Sayginer Osman Alfano Antonio Cassinelli Marco Caironi Mario Suriano Raffaella Zaghloul Mohamed Tagliaferri Alberto Ferrari Maurizio Pietralunga Silvia M.
author_facet	Chen Hao Chiasera Alessandro Armellini Cristina Speranza Giorgio Varas Stefano Sayginer Osman Alfano Antonio Cassinelli Marco Caironi Mario Suriano Raffaella Zaghloul Mohamed Tagliaferri Alberto Ferrari Maurizio Pietralunga Silvia M.
author_sort	Chen Hao
title	Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
title_short	Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
title_full	Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
title_fullStr	Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
title_full_unstemmed	Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
title_sort	near-ir transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/8652add9edcf42a09ee21e31b205a231
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Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

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