Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.
Saved in:
| Main Authors: | Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Gordon Stecklein, Chris J. Palmstrøm, Paul A. Crowell |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2016
|
| Subjects: | |
| Online Access: | https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
by: Shu-Jui Chang, et al.
Published: (2017) -
Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
by: Le Duc Anh, et al.
Published: (2016) -
Ferromagnetic Resonance Revised – Electrodynamic Approach
by: Jerzy Krupka, et al.
Published: (2017) -
Spin density wave instability in a ferromagnet
by: Yan Wu, et al.
Published: (2018) -
Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating
by: Ryo Ohshima, et al.
Published: (2021)