High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K.
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| Autores principales: | , , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/88720594780d4f19b49a8f803fa9dc58 |
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| Sumario: | Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K. |
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