High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K.

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Autores principales:	Lin Yang, Daihong Huh, Rui Ning, Vi Rapp, Yuqiang Zeng, Yunzhi Liu, Sucheol Ju, Yi Tao, Yue Jiang, Jihyun Beak, Juyoung Leem, Sumanjeet Kaur, Heon Lee, Xiaolin Zheng, Ravi S. Prasher
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/88720594780d4f19b49a8f803fa9dc58
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spelling	oai:doaj.org-article:88720594780d4f19b49a8f803fa9dc582021-12-02T17:45:15ZHigh thermoelectric figure of merit of porous Si nanowires from 300 to 700 K10.1038/s41467-021-24208-32041-1723https://doaj.org/article/88720594780d4f19b49a8f803fa9dc582021-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-24208-3https://doaj.org/toc/2041-1723Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K.Lin YangDaihong HuhRui NingVi RappYuqiang ZengYunzhi LiuSucheol JuYi TaoYue JiangJihyun BeakJuyoung LeemSumanjeet KaurHeon LeeXiaolin ZhengRavi S. PrasherNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Lin Yang Daihong Huh Rui Ning Vi Rapp Yuqiang Zeng Yunzhi Liu Sucheol Ju Yi Tao Yue Jiang Jihyun Beak Juyoung Leem Sumanjeet Kaur Heon Lee Xiaolin Zheng Ravi S. Prasher High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
description	Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K.
format	article
author	Lin Yang Daihong Huh Rui Ning Vi Rapp Yuqiang Zeng Yunzhi Liu Sucheol Ju Yi Tao Yue Jiang Jihyun Beak Juyoung Leem Sumanjeet Kaur Heon Lee Xiaolin Zheng Ravi S. Prasher
author_facet	Lin Yang Daihong Huh Rui Ning Vi Rapp Yuqiang Zeng Yunzhi Liu Sucheol Ju Yi Tao Yue Jiang Jihyun Beak Juyoung Leem Sumanjeet Kaur Heon Lee Xiaolin Zheng Ravi S. Prasher
author_sort	Lin Yang
title	High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
title_short	High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
title_full	High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
title_fullStr	High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
title_full_unstemmed	High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
title_sort	high thermoelectric figure of merit of porous si nanowires from 300 to 700 k
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/88720594780d4f19b49a8f803fa9dc58
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High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

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