High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K

Performance of Si nanowires as thermoelectrics are evaluated only from cryogenic to ambient temperatures and ZT has remained low. Here, the authors systematically optimized the synthesis method and improved the suspended microdevice platform to achieve high-performance thermoelectrics up to 700 K.

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Detalles Bibliográficos
Autores principales: Lin Yang, Daihong Huh, Rui Ning, Vi Rapp, Yuqiang Zeng, Yunzhi Liu, Sucheol Ju, Yi Tao, Yue Jiang, Jihyun Beak, Juyoung Leem, Sumanjeet Kaur, Heon Lee, Xiaolin Zheng, Ravi S. Prasher
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
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Acceso en línea:https://doaj.org/article/88720594780d4f19b49a8f803fa9dc58
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