Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

The solid-state single-photon source is the core of applications such as quantum cryptography, quantum sensing, and quantum computing. Recently, the point defects in two-dimensional (2D) hexagonal boron nitride (h-BN) have become excellent candidates for next-generation single-photon sources due to...

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Autores principales:	Chao Lyu, Fang Liu, Zhihao Zang, Tingting Wang, Yanping Li, Xiaolong Xu, Xinqiang Wang, Yu Ye
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/888062f2e37c4631960c102c99ec5594
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spelling	oai:doaj.org-article:888062f2e37c4631960c102c99ec55942021-12-01T18:52:06ZTransferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy2158-322610.1063/5.0063594https://doaj.org/article/888062f2e37c4631960c102c99ec55942021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0063594https://doaj.org/toc/2158-3226The solid-state single-photon source is the core of applications such as quantum cryptography, quantum sensing, and quantum computing. Recently, the point defects in two-dimensional (2D) hexagonal boron nitride (h-BN) have become excellent candidates for next-generation single-photon sources due to their chemical and physical stability and ultra-high brightness at room temperature. The 2D layered structure of h-BN allows the single-photon emitters (SPEs) in it to have high photon extraction efficiency and be integrated into photonic circuits easily. However, most of the SPEs found in h-BN flakes are present at the edges or wrinkles. Here, we report on the room-temperature SPEs in h-BN film grown by molecular beam epitaxy followed by a high-temperature post-annealing process and their deterministic transfer. Using the all-dry viscoelastic stamping method, the h-BN film grown on the Al2O3 substrate can be transferred to other substrates. The transferred SPEs are discretely distributed among the continuous h-BN flakes, and the SPE density is as high as ∼0.17 μm−2. After identification, the determined SPE can be deterministically transferred to other structures by the all-dry transfer method. The deterministic transfer of SPEs distributed on the h-BN flakes promises the potential to integrate SPEs into many quantum technology applications.Chao LyuFang LiuZhihao ZangTingting WangYanping LiXiaolong XuXinqiang WangYu YeAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115101-115101-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Chao Lyu Fang Liu Zhihao Zang Tingting Wang Yanping Li Xiaolong Xu Xinqiang Wang Yu Ye Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
description	The solid-state single-photon source is the core of applications such as quantum cryptography, quantum sensing, and quantum computing. Recently, the point defects in two-dimensional (2D) hexagonal boron nitride (h-BN) have become excellent candidates for next-generation single-photon sources due to their chemical and physical stability and ultra-high brightness at room temperature. The 2D layered structure of h-BN allows the single-photon emitters (SPEs) in it to have high photon extraction efficiency and be integrated into photonic circuits easily. However, most of the SPEs found in h-BN flakes are present at the edges or wrinkles. Here, we report on the room-temperature SPEs in h-BN film grown by molecular beam epitaxy followed by a high-temperature post-annealing process and their deterministic transfer. Using the all-dry viscoelastic stamping method, the h-BN film grown on the Al2O3 substrate can be transferred to other substrates. The transferred SPEs are discretely distributed among the continuous h-BN flakes, and the SPE density is as high as ∼0.17 μm−2. After identification, the determined SPE can be deterministically transferred to other structures by the all-dry transfer method. The deterministic transfer of SPEs distributed on the h-BN flakes promises the potential to integrate SPEs into many quantum technology applications.
format	article
author	Chao Lyu Fang Liu Zhihao Zang Tingting Wang Yanping Li Xiaolong Xu Xinqiang Wang Yu Ye
author_facet	Chao Lyu Fang Liu Zhihao Zang Tingting Wang Yanping Li Xiaolong Xu Xinqiang Wang Yu Ye
author_sort	Chao Lyu
title	Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
title_short	Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
title_full	Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
title_fullStr	Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
title_full_unstemmed	Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
title_sort	transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/888062f2e37c4631960c102c99ec5594
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Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

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