Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isotherma...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Feilong Ding, Deqi Dong, Yihan Chen, Xinnan Lin, Lining Zhang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	phase change memory dynamic nucleation fast SET programming CMOS integrations retention failure Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/88851080bed84e9e8f63781eeebfc8fb
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:88851080bed84e9e8f63781eeebfc8fb
record_format	dspace
spelling	oai:doaj.org-article:88851080bed84e9e8f63781eeebfc8fb2021-11-25T18:31:02ZRobust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention10.3390/nano111129452079-4991https://doaj.org/article/88851080bed84e9e8f63781eeebfc8fb2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2945https://doaj.org/toc/2079-4991A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isothermal conditions during PCM cell programming, an improved crystallization model was proposed that goes beyond the classical nucleation and growth model. With the above, the incubation period in which the cluster distributions reached their equilibrium was captured beyond the capability of simulations with a steady-state nucleation rate. The implications of the developed simulation method are discussed regarding PCM fast SET programming and retention. This work provides the possibility for further improvement of PCM and integration with CMOS technology.Feilong DingDeqi DongYihan ChenXinnan LinLining ZhangMDPI AGarticlephase change memorydynamic nucleationfast SET programmingCMOS integrationsretention failureChemistryQD1-999ENNanomaterials, Vol 11, Iss 2945, p 2945 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	phase change memory dynamic nucleation fast SET programming CMOS integrations retention failure Chemistry QD1-999
spellingShingle	phase change memory dynamic nucleation fast SET programming CMOS integrations retention failure Chemistry QD1-999 Feilong Ding Deqi Dong Yihan Chen Xinnan Lin Lining Zhang Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
description	A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform critical sizes of nuclei due to the non-isothermal conditions during PCM cell programming, an improved crystallization model was proposed that goes beyond the classical nucleation and growth model. With the above, the incubation period in which the cluster distributions reached their equilibrium was captured beyond the capability of simulations with a steady-state nucleation rate. The implications of the developed simulation method are discussed regarding PCM fast SET programming and retention. This work provides the possibility for further improvement of PCM and integration with CMOS technology.
format	article
author	Feilong Ding Deqi Dong Yihan Chen Xinnan Lin Lining Zhang
author_facet	Feilong Ding Deqi Dong Yihan Chen Xinnan Lin Lining Zhang
author_sort	Feilong Ding
title	Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
title_short	Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
title_full	Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
title_fullStr	Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
title_full_unstemmed	Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention
title_sort	robust simulations of nanoscale phase change memory: dynamics and retention
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/88851080bed84e9e8f63781eeebfc8fb
work_keys_str_mv	AT feilongding robustsimulationsofnanoscalephasechangememorydynamicsandretention AT deqidong robustsimulationsofnanoscalephasechangememorydynamicsandretention AT yihanchen robustsimulationsofnanoscalephasechangememorydynamicsandretention AT xinnanlin robustsimulationsofnanoscalephasechangememorydynamicsandretention AT liningzhang robustsimulationsofnanoscalephasechangememorydynamicsandretention
_version_	1718411029487026176

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Ejemplares similares